|Title||Tunnel and electrostatic coupling in graphene-LaAlO3/SrTiO3 hybrid systems|
|Publication Type||Journal Article|
|Year of Publication||2016|
|Authors||Aliaj, I.., I.. Torre, V.. Miseikis, E.. di Gennaro, A.. Sambri, A.. Gamucci, C.. Coletti, F.. Beltram, F.. M. Granozio, M.. Polini, V.. Pellegrini, and S.. Roddaro|
|Keywords||electrical contacts, electrical-characterization, electrical-probing, Graphene, hybrid systems, leakage current, nanoprobing, soft contact|
We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep 2-dimensional electron system. At low graphene-oxide inter-layer bias, the two electron systems are electrically isolated, despite their small spatial separation. A very efficient reciprocal gating of the two neighboring 2-dimensional systems is shown. A pronounced rectifying behavior is observed for larger bias values and ascribed to the interplay between electrostatic field-effects and tunneling across the LaAlO3 barrier. The relevance of these results in the context of strongly coupled bilayer systems is discussed.