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In-situ SEM nanoprobing on a double transistor with a common source with color coding of signal coming from each nano probe.
Electron Failure Analysis Electronics

Multi-channel EFA
Electrical characterization and EFA (EBIC and EBAC) used to detect and locate failures in semiconductor devices.
Electron Failure Analysis Probing Electronics

EBIC / EBAC techniques for semiconductor failure analysis
Five miBot nano probers landed on 100 nm flash memory bits contacts to find a failing bit and to understand its malfunction.
Electron Failure Analysis Probing Electronics

Nanoprobing on a faulty memory bit
Electron Failure Analysis Electronics

Identifying origins of EBIRCh contrast
59 nm failing spot in a leaky 130 tech node transistor detected using Electron Beam Induced Resistance Change (EBIRCh).
Electron Failure Analysis Probing Electronics

Defect localization at transistor gate using EBIRCh
resistance contrast imaging spots a dielectric short between two capacitor plates
Electron Failure Analysis Electronics

Spotting shorts with RCI
Precise circuit editing: deposition of 1 kOhm pull-up resistor by a FIB using in-situ nano probing on a tilted stage
Electron Failure Analysis Probing Electronics

Circuit editing for IC debug
EBIC signal on AIGaN/GaN HEMT used to understand issues with threshold voltage, non-uniformity, damaged p-n junctions.
Electron Failure Analysis Probing Electronics Materials Science

EFA of high electron mobility transistors
In-situ SEM EBIC characterization of p-n junctions in a semiconductor chip cross-section.
Electron Failure Analysis Probing Electronics

Cross-section EBIC of a transistor array
Electrical characterization of 22 nm, 14 nm and 10 nm technology node NMOS and PMOS transistors on the M0 layer.
Electron Failure Analysis Probing Electronics

Electrical nanoprobing on 22, 14, and 10 nm devices
miBot nanoprober tip in contact with a cross-section of a GaAs solar cell for quantitative EBIC on the p-n junction.
Electron Failure Analysis Electronics

Quantitative EBIC on GaAs solar cell p-n junction
An SEM image of nanoprobes on a defective MOSFET device to measure fF gate capacitance-voltage characteristic.
Electron Failure Analysis Probing

Femtofarad capacitance-voltage measurement
Heating and cooling stage for in-situ SEM nano probing to study semiconductor devices temperature-dependent behavior
Electron Failure Analysis Probing Materials Science

Thermal stage for temperature-dependent nanoprobing
Hexagonal array of self-assembled soot nanoparticles grown on a carbon microtube surface characterized by nanoprobing.
Electron Failure Analysis Probing Materials Science

Field-emitting properties of carbon micropyramids
IV curves for 180 nm tech node PMOS transistor at temperatures of -30, 75, 150°C reached by a heating and cooling stage.
Electron Failure Analysis Probing Electronics Materials Science

Thermal behavior of a PMOS transistor
miBot probe collects the EBIC signal showin a short between two networks on an ASIC in-situ FIB SEM at a 54° tilt angle.
Electron Failure Analysis Probing Electronics

Metal layers short localization with EBAC and FIB circuit modifications

Because seeing is believing!

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Imina Technologies' application engineer shows a colleague how to land probes on nanoscale contacts for in-situ SEM transistor characterization.