All applications

Cross-section EBIC of a transistor array using a Large Sample Adapter

Electron Beam Induced Current (EBIC) characterization on cross-section of a semiconductor device is one of the few failure analysis techniques available to localize defects in depth of the layers. It highlights PN junctions which gives information on the doping profiles and concentrations as well as on the diffusion and recombination of minority carriers.

Cross-section EBIC sample preparation requires to mount the sample on a cross-sectioning paddle, polish its side and inspect it in a scanning electron microscope to determine if the region of interest has been revealed. Few polishing/inspection steps can be necessary to reach the desired location.

In this application note, we describe the EBIC measurement at a cross-section of a transistor array using a process that saves a great amount of sample preparation time. The sample is kept on the cross-sectioning paddle during polishing, inspection and probing, saving polishing tool alignment time and sample handling.

This is achieved by using the Imina Technologies’ Large Sample Adapter with the Nanoprobing Platform. With this assembly, measurements of millimeters high and/or wide samples (e.g. 2” wafers) becomes possible.

Because seeing is believing!

We have fully equipped demo lab for semiconductor electrical failure analysis. Our applications team is eager to perform live demonstrations and feasibility studies for you, onsite or online.

Book your demo today!

In the meantime, do not miss the opportunity to learn more about our products and applications with one of our webinars!

Register to a webinar