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I-V characterization of graphene-based thin-film transistors

One of the key challenges in electrical characterization of thin-film transistors (TFT) is landing probes on the thin electrodes without penetrating it, resulting in improper characterization and damage of the device.

This application note reports about the successful use of miBot micromanipulators to overcome that issue. The device under test is a TFT with a graphene channel. The source and drain consist of 100 nm thick conductive electrodes. The channel, source and drain are all fabricated on a 100 nm thick flexible insulating material deposited on a conductive substrate, acting as the gate dielectric and electrode, respectively.

The time to carry out this experiment was also greatly reduced thanks to the virtually-unrestricted range of motion the miBot micromanipulators compared with traditional manual probers.

Made in collaboration with

Microsystems Laboratory, EPFL, Lausanne, Switzerland

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