High-power applications rely on SiC, GaN, and high-voltage MOSFETs/IGBTs. To enable our users to measure IV curves and characterize breakdown and leakage current in such devices at nanoscale, we have developed a nanoprobing platform that can safely apply voltages up to 1 kV both through the probers and the backside of the sample.
Imina Technologies’ Nanoprobing High-Voltage Platform features NANO+ probers for fast and safe landing, ensuring good electrical contact without damaging the pads. The piezodriven probers can be easily moved around the platform, with nm-resolution over cm-range. Precisio™ software suite guides users through the entire workflow step by step, from setup and measurement to data reporting.
In this application note, we are showing the capabilities of this platform on test structures of silicon sensors for the CMS tracker at CERN, kindly provided by the Marietta-Blau-Institute for Particle Physics in Vienna by Dr. Thomas Bergauer and Stefan Schultschik.
We have fully equipped demo lab for semiconductor electrical failure analysis. Our applications team is eager to perform live demonstrations and feasibility studies for you, onsite or online.
In the meantime, do not miss the opportunity to learn more about our products and applications with one of our webinars!
