In the field of semiconductor failure analysis, the use of Electron Beam Absorbed Current (EBAC) combined with FIB-cut in Dual Beams has become popular to investigate shorts and opens between metal lines.
In this article, we describe the defect localization of a short between two networks on an ASIC from the automotive industry. These networks are crossing each other at four different locations.
We used a combination of FIB-cuts with EBAC images to determine the crossing point where the short is located, with the following procedure:
This application shows the ability of the miBot™ nanoprobers to precisely position and land probes when the microscope sample stage is tilted.
W. Courbat and J. Jatzkowski,“Faster and More Accurate Failure Analysis: Circuit Editing and Short Localization Performed at Same FEB Tilt Angle using Multiple Techniques”, Electronic Device Failure Analysis, 21(4), p. 22-28, 2019.