All applications

Spotting shorts: how to use RCI to find low resistance defects in metal-insulator-metal capacitors

Capacitors are important components of integrated circuits. The dielectric layer of a capacitor can crack leading to a short between the plates. 

Localizing shorts can be tricky, as there is little resistance contrast between a defect and the surrounding structures.

Most failure analysis methods fail to localize low ohmic resistance defects between two parallel plates with sufficient spatial resolution. For example, OBIRCh could potentially find a failure spot with a few microns’ precision, but it is not good enough for preparing a lamella for a subsequent investigation.

In this application note, we show how to highlight shorts within the oxide of Metal-Insulator-Metal (MIM) capacitors using nanoprobing combined with Resistive Contrast Imaging (RCI).

We perform RCI on Imina Technologies’ EFA setup equipped with point electronic’s pre-amplifiers. 

Enhanced contrast yields unparalleled localization precision of 500 nm for such fails, which is sufficiant to prepare a lamella for further investigation with TEM.

This application may also interest you

EBIC measurement of the minority carriers’ diffusion length in a GaAs solar cell p-n junction

Advanced EFA with color coded multi-channel nanoprobing

Femtofarad capacitance-voltage measurement at transistor contact level

International Sales and Customer Support

Our solutions are distributed worldwide through our network of qualified partners. We are here to support you! Get in touch with us, we are committed to assist you in selecting the products that best meets your needs.

Find a partner in your country