Direct contact four-point probe characterization of Si microwire absorbers for artificial photosynthesis

TitleDirect contact four-point probe characterization of Si microwire absorbers for artificial photosynthesis
Publication TypeJournal Article
Year of Publication2016
AuthorsEngel, J.. T., B.. E. Blaikie, A.. Kumar, A.. Castañeda, A.. Gupta, and D.. R. Oliver
JournalRSC Adv.
Volume6
Pagination110344–110348
Date Published11/2016
ISSN2046-2069
Keywords4-point-probing, electrical-characterization, electrical-contact, electrical-probing, microwires
Abstract

We present a facile approach that achieves four-point electrical characterization of silicon microwires fabricated using a bottom-up vapour–liquid–solid process. Tungsten probes are brought into direct contact with silicon microwires using piezoelectrically driven probe actuators. This technique can be applied to silicon microwires without the need for high-temperature lithographic preparation or the additional use of In/Ga to ensure reliable electrical contact between the probe and the wire. Comparison between two-point probe and four-point probe measurements demonstrates the robustness of the four-point approach. Significantly, the four-point characterization technique is not impacted by native oxides at the microwire/tungsten probe interface. The four-point technique can be applied to sense electrical responses in half-cell and full-cell representations of artificial photosynthesis systems, regardless of catalysts or functional groups attached to the microwire sidewalls.

URLhttp://xlink.rsc.org/?DOI=C6RA23534D
DOI10.1039/C6RA23534D