Examination of semiconducting properties of oxides in the vicinity of metal-oxide interfaces for selected alloys

TitleExamination of semiconducting properties of oxides in the vicinity of metal-oxide interfaces for selected alloys
Publication TypeConference Paper
Year of Publication2016
AuthorsVanta, R., S. Abolhassani, and M. Dadras
Conference NameEuropean Microscopy Congress 2016: Proceedings
Date Published12/2016
PublisherWiley-VCH Verlag GmbH & Co. KGaA
Conference LocationWeinheim, Germany
ISBN Number9783527808465
Keywordsmetal‐oxide interface, micromanipulation, micromanipulators, nanomanipulation, oxidation, SEM, semiconductor

This paper provides a brief overview of the studies performed on semi-conducting properties of oxides and the change of these properties, for specific materials. A direct method is developed to measure the properties of the oxide by means of micromanipulators, in the SEM. The interest of this method is to evaluate the role of such change of properties in the vicinity of interface of metal-oxides and to correlate the properties to the oxidation behavior and also to the hydrogen uptake of the alloy. In a previous study the properties of a material has been measured by means of micromanipulators, outside of the microscope. This study has been performed in the SEM. The present study reports the properties of two families of alloys. It shows that an alloy with a sub-stoichiometric oxide in the vicinity of the interface has a lower resistivity. The method consists of using a fine micromanipulator installed in the SEM; a surface is created by FIB micromachining and the measurements are made by means of the micromanipulators inside the SEM, in this manner an accurate positioning is possible. As it can be observed in Figure 1, the oxide in alloy Zr2.5{%}Nb is sub-stoichiometric near the metal oxide interface [1]. Figure 2 presents the results of measurements of the Zr2.5{%}Nb and low-tin Zircaloy-4. The results of measurements and the comparison of the two alloys show that the second alloy having a stoichiometric oxide does not show such variation in resistivity in the vicinity of the metal-oxide interface. The results will be discussed to confirm the role of the different properties of the oxide, on the oxidation behavior.